Chinese researchers have unveiled a groundbreaking advancement in semiconductor technology with the development of ferroelectric transistors operating at just 0.6 volts — the world's smallest and most energy-efficient to date. Published in Science Advances, this innovation addresses a critical bottleneck in AI and computing systems by aligning memory and logic unit voltages for the first time.
The breakthrough resolves a longstanding challenge where traditional non-volatile memory required up to 5 volts for write operations, forcing complex voltage conversion circuits that consumed significant space and power. Team leader Qiu Chenguang of Peking University emphasized that their 1-nanometer gate technology enables "zero-barrier data transfer between memory and computing units," potentially reducing AI chip power waste by up to 90%.
Industry analysts highlight three key implications:
Accelerated development of energy-efficient AI chips for large language models
Extended battery life for wearable devices and IoT networks
Enhanced competitiveness in next-generation semiconductor manufacturing
Notably, the technology demonstrates compatibility with existing industrial processes, suggesting rapid scalability. Academician Peng Lianmao noted its potential to "redefine power benchmarks" across edge computing and smart infrastructure applications. As global demand for efficient computing grows, this innovation positions the Chinese mainland at the forefront of semiconductor research while offering solutions to universal energy challenges in tech development.
