Chinese Breakthrough in Ultralow-Power Transistors Reshapes Semiconductor Future
Chinese researchers develop 0.6V ferroelectric transistors, addressing voltage mismatch in AI chips and boosting energy efficiency for future tech applications.
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Chinese researchers develop 0.6V ferroelectric transistors, addressing voltage mismatch in AI chips and boosting energy efficiency for future tech applications.
Chinese scientists have developed artificial sapphire dielectric wafers, a breakthrough that could lead to more power-efficient chips and improve electronic device performance.